Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells.
Opt Express
; 21 Suppl 1: A123-30, 2013 Jan 14.
Article
en En
| MEDLINE
| ID: mdl-23389263
ABSTRACT
Spatially-resolved electroluminescence (EL) images in the triple-junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irradiation level, it is found that the coupled p-n junction structure and the photovoltaic effect are responsible for the observed EL quenching. With optical coupling and photoswitching effects in the multi-junction diode, a concept of infrared image sensors is proposed.
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1
Banco de datos:
MEDLINE
Asunto principal:
Arsenicales
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Suministros de Energía Eléctrica
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Refractometría
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Energía Solar
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Luz Solar
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Resonancia por Plasmón de Superficie
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Galio
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Indio
Idioma:
En
Año:
2013
Tipo del documento:
Article