Design of Si/SiO2 micropillar cavities for Purcell-enhanced single photon emission at 1.55 µm from InAs/InP quantum dots.
Opt Lett
; 38(17): 3241-4, 2013 Sep 01.
Article
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| MEDLINE
| ID: mdl-23988924
ABSTRACT
Numerical simulations were carried out on micropillar cavities consisting of Si/SiO2 distributed Bragg reflectors (DBRs) with an InP spacer layer. Owing to a large refractive index contrast of ~2 in DBRs, cavities with just 4/6.5 top/bottom DBR pairs that give a low pillar height (~4.5 µm), have noticeable Purcell-enhancement effect in the 1.55-µm band. With careful designs on cavities with diameters of ~2.30 µm, a quality factor of up to 3300, a nominal Purcell factor of up to 110, and an output efficiency of ~60% are obtainable. These results ensure improvement of operation frequency and enhancement of photon indistinguishability for 1.55-µm single photon sources based on InAs/InP quantum dots.
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