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Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour.
Aoki, Yoshitaka; Wiemann, Carsten; Feyer, Vitaliy; Kim, Hong-Seok; Schneider, Claus Michael; Ill-Yoo, Han; Martin, Manfred.
  • Aoki Y; 1] Institute of Physical Chemistry, RWTH Aachen University and JARA-FIT, 52056 Aachen, Germany [2].
  • Wiemann C; Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Centre Jülich, 52425 Jülich, Germany.
  • Feyer V; Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Centre Jülich, 52425 Jülich, Germany.
  • Kim HS; Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea.
  • Schneider CM; 1] Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Centre Jülich, 52425 Jülich, Germany [2] Fakultät für Physik and Center for Nanointegration Duisburg-Essen (CENIDE), Universität Duisburg-Essen, D-47048 Duisburg, Germany.
  • Ill-Yoo H; Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea.
  • Martin M; 1] Institute of Physical Chemistry, RWTH Aachen University and JARA-FIT, 52056 Aachen, Germany [2] Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea [3].
Nat Commun ; 5: 3473, 2014 Mar 17.
Article en En | MEDLINE | ID: mdl-24632885
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Texto completo: 1 Banco de datos: MEDLINE Tipo de estudio: Etiology_studies / Prognostic_studies Idioma: En Año: 2014 Tipo del documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Banco de datos: MEDLINE Tipo de estudio: Etiology_studies / Prognostic_studies Idioma: En Año: 2014 Tipo del documento: Article