Your browser doesn't support javascript.
loading
Controlling the metal to semiconductor transition of MoS2 and WS2 in solution.
Chou, Stanley S; Huang, Yi-Kai; Kim, Jaemyung; Kaehr, Bryan; Foley, Brian M; Lu, Ping; Dykstra, Conner; Hopkins, Patrick E; Brinker, C Jeffrey; Huang, Jiaxing; Dravid, Vinayak P.
  • Chou SS; Advanced Materials Laboratory, Sandia National Laboratories , Albuquerque, New Mexico 87185, United States.
J Am Chem Soc ; 137(5): 1742-5, 2015 Feb 11.
Article en En | MEDLINE | ID: mdl-25608577
ABSTRACT
Lithiation-exfoliation produces single to few-layered MoS2 and WS2 sheets dispersible in water. However, the process transforms them from the pristine semiconducting 2H phase to a distorted metallic phase. Recovery of the semiconducting properties typically involves heating of the chemically exfoliated sheets at elevated temperatures. Therefore, it has been largely limited to sheets deposited on solid substrates. Here, we report the dispersion of chemically exfoliated MoS2 sheets in high boiling point organic solvents enabled by surface functionalization and the controllable recovery of their semiconducting properties directly in solution. This process connects the scalability of chemical exfoliation with the simplicity of solution processing, ultimately enabling a facile method for tuning the metal to semiconductor transitions of MoS2 and WS2 within a liquid medium.
Asunto(s)

Texto completo: 1 Banco de datos: MEDLINE Asunto principal: Semiconductores / Compuestos de Tungsteno / Disulfuros / Molibdeno Idioma: En Año: 2015 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Asunto principal: Semiconductores / Compuestos de Tungsteno / Disulfuros / Molibdeno Idioma: En Año: 2015 Tipo del documento: Article