Vertically Integrated Nanowire-Based Unified Memory.

Lee, Byung-Hyun; Ahn, Dae-Chul; Kang, Min-Ho; Jeon, Seung-Bae; Choi, Yang-Kyu.

Lee BH; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
Ahn DC; Department of Memory Business, Samsung Electronics , San 16 Banwol-Dong, Hwasung City, Gyeonggi-Do 18448, Republic of Korea.
Kang MH; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
Jeon SB; Department of Nano-Process, National Nanofab Center (NNFC) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
Choi YK; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.

Nano Lett ; 16(9): 5909-16, 2016 09 14.

Article en En | MEDLINE | ID: mdl-27579769