Room-Temperature Skyrmion Shift Device for Memory Application.

Yu, Guoqiang; Upadhyaya, Pramey; Shao, Qiming; Wu, Hao; Yin, Gen; Li, Xiang; He, Congli; Jiang, Wanjun; Han, Xiufeng; Amiri, Pedram Khalili; Wang, Kang L

Yu, Guoqiang; Upadhyaya, Pramey; Shao, Qiming; Wu, Hao; Yin, Gen; Li, Xiang; He, Congli; Jiang, Wanjun; Han, Xiufeng; Amiri, Pedram Khalili; Wang, Kang L.

Yu G; Department of Electrical Engineering, University of California , Los Angeles, California 90095, United States.
Upadhyaya P; Department of Electrical Engineering, University of California , Los Angeles, California 90095, United States.
Shao Q; Department of Electrical Engineering, University of California , Los Angeles, California 90095, United States.
Wu H; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
Yin G; Department of Electrical Engineering, University of California , Los Angeles, California 90095, United States.
Li X; Department of Electrical Engineering, University of California , Los Angeles, California 90095, United States.
Jiang W; State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University , Beijing 100084, China.
Han X; Collaborative Innovation Center of Quantum Matter , Beijing 100084, China.
Amiri PK; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
Wang KL; Department of Electrical Engineering, University of California , Los Angeles, California 90095, United States.