Feasibility Study of Extended-Gate-Type Silicon Nanowire Field-Effect Transistors for Neural Recording.

Kang, Hongki; Kim, Jee-Yeon; Choi, Yang-Kyu; Nam, Yoonkey.

Kang H; Department of Bio and Brain Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea. hongki.kang@kaist.ac.kr.
Kim JY; Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea. jyeon@nobelab.kaist.ac.kr.
Choi YK; Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea. ykchoi@ee.kaist.ac.kr.
Nam Y; KAIST Institute for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea. ykchoi@ee.kaist.ac.kr.

Sensors (Basel) ; 17(4)2017 Mar 28.

Article en En | MEDLINE | ID: mdl-28350370