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Semiconductor-based Multilayer Selective Solar Absorber for Unconcentrated Solar Thermal Energy Conversion.
Thomas, Nathan H; Chen, Zhen; Fan, Shanhui; Minnich, Austin J.
  • Thomas NH; Division of Engineering and Applied Science, California Institute of Technology, Pasadena, California, 91125, United States.
  • Chen Z; Ginzton Laboratory, Department of Electrical Engineering, Stanford University, Stanford, California, 94305, United States.
  • Fan S; Jiangsu Key Laboratory for Design & Manufacture of Micro/Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing, 210096, China.
  • Minnich AJ; Ginzton Laboratory, Department of Electrical Engineering, Stanford University, Stanford, California, 94305, United States.
Sci Rep ; 7(1): 5362, 2017 07 13.
Article en En | MEDLINE | ID: mdl-28706230
ABSTRACT
Solar thermal energy conversion has attracted substantial renewed interest due to its applications in industrial heating, air conditioning, and electricity generation. Achieving stagnation temperatures exceeding 200 °C, pertinent to these technologies, with unconcentrated sunlight requires spectrally selective absorbers with exceptionally low emissivity in the thermal wavelength range and high visible absorptivity for the solar spectrum. In this Communication, we report a semiconductor-based multilayer selective absorber that exploits the sharp drop in optical absorption at the bandgap energy to achieve a measured absorptance of 76% at solar wavelengths and a low emittance of approximately 5% at thermal wavelengths. In field tests, we obtain a peak temperature of 225 °C, comparable to that achieved with state-of-the-art selective surfaces. With straightforward optimization to improve solar absorption, our work shows the potential for unconcentrated solar thermal systems to reach stagnation temperatures exceeding 300 °C, thereby eliminating the need for solar concentrators for mid-temperature solar applications such as supplying process heat.