Effect of MgO Underlying Layer on the Growth of GaO<sub>x</sub> Tunnel Barrier in Epitaxial Fe/GaO<sub>x</sub>/(MgO)/Fe Magnetic Tunnel Junction Structure.

Effect of MgO Underlying Layer on the Growth of GaO_x Tunnel Barrier in Epitaxial Fe/GaO_x/(MgO)/Fe Magnetic Tunnel Junction Structure.

Narayananellore, Sai Krishna; Doko, Naoki; Matsuo, Norihiro; Saito, Hidekazu; Yuasa, Shinji.

Narayananellore SK; National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Umezono 1-1-1, Central 2, Tsukuba, Ibaraki 305-8568, Japan. narayananellore-sk@aist.go.jp.
Doko N; National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Umezono 1-1-1, Central 2, Tsukuba, Ibaraki 305-8568, Japan. dokou.n@aist.go.jp.
Matsuo N; Chiba Institute of Technology, 2-17-1 Tsudanuma, Narashino, Chiba 275-0016, Japan. dokou.n@aist.go.jp.
Saito H; National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Umezono 1-1-1, Central 2, Tsukuba, Ibaraki 305-8568, Japan. matsuo-n@aist.go.jp.
Yuasa S; Chiba Institute of Technology, 2-17-1 Tsudanuma, Narashino, Chiba 275-0016, Japan. matsuo-n@aist.go.jp.

Sensors (Basel) ; 17(10)2017 Oct 23.

Article en En | MEDLINE | ID: mdl-29065516