The influence of the metal film, placed close to the free side of the piezoelectric lateral electric field excited resonator, on its characteristics.

Zaitsev, B D; Shikhabudinov, A M; Teplykh, A A; Borodina, I A.

Zaitsev BD; Kotel'nikov Institute of Radio Engineering and Electronics of RAS, Saratov Branch, Saratov 410019, Russia. Electronic address: zai-boris@yandex.ru.
Shikhabudinov AM; Kotel'nikov Institute of Radio Engineering and Electronics of RAS, Saratov Branch, Saratov 410019, Russia.
Teplykh AA; Kotel'nikov Institute of Radio Engineering and Electronics of RAS, Saratov Branch, Saratov 410019, Russia.
Borodina IA; Kotel'nikov Institute of Radio Engineering and Electronics of RAS, Saratov Branch, Saratov 410019, Russia.

Ultrasonics ; 84: 107-111, 2018 Mar.

Article en En | MEDLINE | ID: mdl-29102799

Palabras clave

Dielectric plate with metal film; Finite element analysis; Parallel resonance; Piezoelectric lateral electric field excited resonator; Resonant frequency; Series resonance; Temperature

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2018 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2018 Tipo del documento: Article