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Widely tunable black phosphorus mid-infrared photodetector.
Chen, Xiaolong; Lu, Xiaobo; Deng, Bingchen; Sinai, Ofer; Shao, Yuchuan; Li, Cheng; Yuan, Shaofan; Tran, Vy; Watanabe, Kenji; Taniguchi, Takashi; Naveh, Doron; Yang, Li; Xia, Fengnian.
  • Chen X; Department of Electrical Engineering, Yale University, New Haven, CT, 06511, USA.
  • Lu X; Department of Physics and Institute of Materials Science and Engineering, Washington University, St. Louis, MO, 63130, USA.
  • Deng B; Department of Electrical Engineering, Yale University, New Haven, CT, 06511, USA.
  • Sinai O; Faculty of Engineering and Bar-Ilan Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, 52900, Ramat-Gan, Israel.
  • Shao Y; Department of Electrical Engineering, Yale University, New Haven, CT, 06511, USA.
  • Li C; Department of Electrical Engineering, Yale University, New Haven, CT, 06511, USA.
  • Yuan S; Department of Electrical Engineering, Yale University, New Haven, CT, 06511, USA.
  • Tran V; Department of Physics and Institute of Materials Science and Engineering, Washington University, St. Louis, MO, 63130, USA.
  • Watanabe K; Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan.
  • Taniguchi T; Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan.
  • Naveh D; Faculty of Engineering and Bar-Ilan Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, 52900, Ramat-Gan, Israel.
  • Yang L; Department of Physics and Institute of Materials Science and Engineering, Washington University, St. Louis, MO, 63130, USA. lyang@physics.wustl.edu.
  • Xia F; Department of Electrical Engineering, Yale University, New Haven, CT, 06511, USA. fengnian.xia@yale.edu.
Nat Commun ; 8(1): 1672, 2017 11 22.
Article en En | MEDLINE | ID: mdl-29162821
ABSTRACT
Lately rediscovered orthorhombic black phosphorus (BP) exhibits promising properties for near- and mid-infrared optoelectronics. Although recent electrical measurements indicate that a vertical electric field can effectively reduce its transport bandgap, the impact of the electric field on light-matter interaction remains unclear. Here we show that a vertical electric field can dynamically extend the photoresponse in a 5 nm-thick BP photodetector from 3.7 to beyond 7.7 µm, leveraging the Stark effect. We further demonstrate that such a widely tunable BP photodetector exhibits a peak extrinsic photo-responsivity of 518, 30, and 2.2 mA W-1 at 3.4, 5, and 7.7 µm, respectively, at 77 K. Furthermore, the extracted photo-carrier lifetime indicates a potential operational speed of 1.3 GHz. Our work not only demonstrates the potential of BP as an alternative mid-infrared material with broad optical tunability but also may enable the compact, integrated on-chip high-speed mid-infrared photodetectors, modulators, and spectrometers.