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Electrically reversible cracks in an intermetallic film controlled by an electric field.
Liu, Z Q; Liu, J H; Biegalski, M D; Hu, J-M; Shang, S L; Ji, Y; Wang, J M; Hsu, S L; Wong, A T; Cordill, M J; Gludovatz, B; Marker, C; Yan, H; Feng, Z X; You, L; Lin, M W; Ward, T Z; Liu, Z K; Jiang, C B; Chen, L Q; Ritchie, R O; Christen, H M; Ramesh, R.
  • Liu ZQ; School of Materials Science and Engineering, Beihang University, Beijing, 100191, China. zhiqi@buaa.edu.cn.
  • Liu JH; School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
  • Biegalski MD; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
  • Hu JM; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA.
  • Shang SL; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA.
  • Ji Y; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA.
  • Wang JM; School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
  • Hsu SL; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
  • Wong AT; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
  • Cordill MJ; Erich Schmid Institute of Materials Science, Austrian Academy of Sciences, and Department of Material Physics, Montanuniversität Leoben, Jahnstr. 12, 8700, Leoben, Austria.
  • Gludovatz B; School of Mechanical and Manufacturing Engineering, UNSW Sydney, Sydney, NSW, 2052, Australia.
  • Marker C; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA.
  • Yan H; School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
  • Feng ZX; School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
  • You L; School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China.
  • Lin MW; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
  • Ward TZ; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
  • Liu ZK; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA.
  • Jiang CB; School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
  • Chen LQ; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA.
  • Ritchie RO; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
  • Christen HM; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
  • Ramesh R; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
Nat Commun ; 9(1): 41, 2018 01 03.
Article en En | MEDLINE | ID: mdl-29298986
ABSTRACT
Cracks in solid-state materials are typically irreversible. Here we report electrically reversible opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric substrate driven by a small electric field (~0.83 kV/cm). Accordingly, a nonvolatile colossal electroresistance on-off ratio of more than 108 is measured across the cracks in the intermetallic film at room temperature. Cracks are easily formed with low-frequency voltage cycling and remain stable when the device is operated at high frequency, which offers intriguing potential for next-generation high-frequency memory applications. Moreover, endurance testing demonstrates that the opening and closing of such cracks can reach over 107 cycles under 10-µs pulses, without catastrophic failure of the film.