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Bright triplet excitons in caesium lead halide perovskites.
Becker, Michael A; Vaxenburg, Roman; Nedelcu, Georgian; Sercel, Peter C; Shabaev, Andrew; Mehl, Michael J; Michopoulos, John G; Lambrakos, Samuel G; Bernstein, Noam; Lyons, John L; Stöferle, Thilo; Mahrt, Rainer F; Kovalenko, Maksym V; Norris, David J; Rainò, Gabriele; Efros, Alexander L.
  • Becker MA; IBM Research - Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland.
  • Vaxenburg R; Optical Materials Engineering Laboratory, Department of Mechanical and Process Engineering, ETH Zurich, 8092 Zurich, Switzerland.
  • Nedelcu G; Computational Materials Science Center, George Mason University, Fairfax, Virginia 22030, USA.
  • Sercel PC; Institute of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zurich, 8093 Zurich, Switzerland.
  • Shabaev A; Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland.
  • Mehl MJ; T. J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA.
  • Michopoulos JG; Computational Materials Science Center, George Mason University, Fairfax, Virginia 22030, USA.
  • Lambrakos SG; US Naval Academy, Annapolis, Maryland 21402, USA.
  • Bernstein N; Center for Computational Materials Science, Naval Research Laboratory, Washington DC 20375, USA.
  • Lyons JL; Center for Computational Materials Science, Naval Research Laboratory, Washington DC 20375, USA.
  • Stöferle T; Center for Computational Materials Science, Naval Research Laboratory, Washington DC 20375, USA.
  • Mahrt RF; Center for Computational Materials Science, Naval Research Laboratory, Washington DC 20375, USA.
  • Kovalenko MV; IBM Research - Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland.
  • Norris DJ; IBM Research - Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland.
  • Rainò G; Institute of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zurich, 8093 Zurich, Switzerland.
  • Efros AL; Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland.
Nature ; 553(7687): 189-193, 2018 01 10.
Article en En | MEDLINE | ID: mdl-29323292
ABSTRACT
Nanostructured semiconductors emit light from electronic states known as excitons. For organic materials, Hund's rules state that the lowest-energy exciton is a poorly emitting triplet state. For inorganic semiconductors, similar rules predict an analogue of this triplet state known as the 'dark exciton'. Because dark excitons release photons slowly, hindering emission from inorganic nanostructures, materials that disobey these rules have been sought. However, despite considerable experimental and theoretical efforts, no inorganic semiconductors have been identified in which the lowest exciton is bright. Here we show that the lowest exciton in caesium lead halide perovskites (CsPbX3, with X = Cl, Br or I) involves a highly emissive triplet state. We first use an effective-mass model and group theory to demonstrate the possibility of such a state existing, which can occur when the strong spin-orbit coupling in the conduction band of a perovskite is combined with the Rashba effect. We then apply our model to CsPbX3 nanocrystals, and measure size- and composition-dependent fluorescence at the single-nanocrystal level. The bright triplet character of the lowest exciton explains the anomalous photon-emission rates of these materials, which emit about 20 and 1,000 times faster than any other semiconductor nanocrystal at room and cryogenic temperatures, respectively. The existence of this bright triplet exciton is further confirmed by analysis of the fine structure in low-temperature fluorescence spectra. For semiconductor nanocrystals, which are already used in lighting, lasers and displays, these excitons could lead to materials with brighter emission. More generally, our results provide criteria for identifying other semiconductors that exhibit bright excitons, with potential implications for optoelectronic devices.

Texto completo: 1 Banco de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Año: 2018 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Año: 2018 Tipo del documento: Article