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Author Correction: Ultra-thin high-efficiency mid-infraredtransmissive Huygens meta-optics.
Zhang, Li; Ding, Jun; Zheng, Hanyu; An, Sensong; Lin, Hongtao; Zheng, Bowen; Du, Qingyang; Yin, Gufan; Michon, Jerome; Zhang, Yifei; Fang, Zhuoran; Shalaginov, Mikhail Y; Deng, Longjiang; Gu, Tian; Zhang, Hualiang; Hu, Juejun.
  • Zhang L; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, Sichuan, 611731, China.
  • Ding J; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
  • Zheng H; School of Information and Science Technology, East China Normal University, Shanghai, 200062, China.
  • An S; Department of Electrical & Computer Engineering, University of Massachusetts Lowell, Lowell, MA, 01854, USA.
  • Lin H; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, Sichuan, 611731, China.
  • Zheng B; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
  • Du Q; Department of Electrical & Computer Engineering, University of Massachusetts Lowell, Lowell, MA, 01854, USA.
  • Yin G; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
  • Michon J; Department of Electrical & Computer Engineering, University of Massachusetts Lowell, Lowell, MA, 01854, USA.
  • Zhang Y; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
  • Fang Z; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
  • Shalaginov MY; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
  • Deng L; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
  • Gu T; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
  • Zhang H; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
  • Hu J; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, Sichuan, 611731, China.
Nat Commun ; 9(1): 2399, 2018 06 14.
Article en En | MEDLINE | ID: mdl-29904109

Texto completo: 1 Banco de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Año: 2018 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Año: 2018 Tipo del documento: Article