Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence.

Wu, Shaoteng; Wang, Liancheng; Liu, Zhiqiang; Yi, Xiaoyan; Wang, Yunyu; Cheng, Cheng; Lin, Chen; Feng, Tao; Zhang, Shuo; Li, Tao; Wei, Tongbo; Yan, Jianchang; Yuan, Guodong; Wang, Junxi; Li, Jinmin

Wu, Shaoteng; Wang, Liancheng; Liu, Zhiqiang; Yi, Xiaoyan; Wang, Yunyu; Cheng, Cheng; Lin, Chen; Feng, Tao; Zhang, Shuo; Li, Tao; Wei, Tongbo; Yan, Jianchang; Yuan, Guodong; Wang, Junxi; Li, Jinmin.

Wu S; College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, People's Republic of China. Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, No. 35A Qinghua East Road, Beijing 100083, People's Republic of China. Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, No. 35A Qinghua East Road, Beijing 100083, People's Republic of China

Nanotechnology ; 30(4): 045604, 2019 Jan 25.

Article en En | MEDLINE | ID: mdl-30485254

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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2019 Tipo del documento: Article

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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2019 Tipo del documento: Article