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Intensive measures of luminescence in GaN/InGaN heterostructures.
Hsiao, Jui-Ju; Huang, Yi-Jen; Chen, Hung-Ing; Jiang, Joe-Air; Wang, Jen-Cheng; Wu, Ya-Fen; Nee, Tzer-En.
  • Hsiao JJ; Graduate Institute of Electro-optical Engineering and Department of Electronic Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan, Taiwan, Republic of China.
  • Huang YJ; Graduate Institute of Electro-optical Engineering and Department of Electronic Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan, Taiwan, Republic of China.
  • Chen HI; Graduate Institute of Electro-optical Engineering and Department of Electronic Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan, Taiwan, Republic of China.
  • Jiang JA; Department of Biomechatronics Engineering, National Taiwan University, Taipei, Taiwan, Republic of China.
  • Wang JC; Graduate Institute of Electro-optical Engineering and Department of Electronic Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan, Taiwan, Republic of China.
  • Wu YF; Department of Electronic Engineering, Ming Chi University of Technology, Taishan Dist., New Taipei City, Taiwan, Republic of China.
  • Nee TE; Graduate Institute of Electro-optical Engineering and Department of Electronic Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan, Taiwan, Republic of China.
PLoS One ; 14(9): e0222928, 2019.
Article en En | MEDLINE | ID: mdl-31550270
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Texto completo: 1 Banco de datos: MEDLINE Asunto principal: Semiconductores / Luminiscencia / Nanocompuestos / Galio / Indio Tipo de estudio: Qualitative_research Idioma: En Año: 2019 Tipo del documento: Article
Texto completo
Imprimir
XML
PubMed Links
Search on Google

Texto completo: 1 Banco de datos: MEDLINE Asunto principal: Semiconductores / Luminiscencia / Nanocompuestos / Galio / Indio Tipo de estudio: Qualitative_research Idioma: En Año: 2019 Tipo del documento: Article