Highly efficient and stable InP/ZnSe/ZnS quantum dot light-emitting diodes.

Won, Yu-Ho; Cho, Oul; Kim, Taehyung; Chung, Dae-Young; Kim, Taehee; Chung, Heejae; Jang, Hyosook; Lee, Junho; Kim, Dongho; Jang, Eunjoo.

Won YH; Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, South Korea.
Cho O; Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, South Korea.
Kim T; Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, South Korea.
Chung DY; Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, South Korea.
Kim T; Department of Chemistry, Yonsei University, Seoul, South Korea.
Chung H; Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, South Korea.
Jang H; Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, South Korea.
Lee J; Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, South Korea.
Kim D; Department of Chemistry, Yonsei University, Seoul, South Korea.
Jang E; Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, South Korea. ejjang12@samsung.com.

Nature ; 575(7784): 634-638, 2019 11.

Article en En | MEDLINE | ID: mdl-31776489

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2019 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2019 Tipo del documento: Article