Remarkable quality improvement of as-grown monolayer MoS<sub>2</sub> by sulfur vapor pretreatment of SiO<sub>2</sub>/Si substrates. | Nanoscale;12(3): 1958-1966, 2020 Jan 23. | MEDLINE

Main content 1 Search 2 Footer 3

+A A -A High contrast

Biblioteca Virtual en Salud

BVS - Literatura Cientifica y Técnica

Localizar descriptor de asunto Búsqueda Avanzada

Remarkable quality improvement of as-grown monolayer MoS₂ by sulfur vapor pretreatment of SiO₂/Si substrates.

Yang, Peng; Shan, Yabing; Chen, Jing; Ekoya, Garel; Han, Jinkun; Qiu, Zhi-Jun; Sun, Junjie; Chen, Fei; Wang, Haomin; Bao, Wenzhong; Hu, Laigui; Zhang, Rong-Jun; Liu, Ran; Cong, Chunxiao.

Yang P; State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China. cxcong@fudan.edu.cn.

Nanoscale ; 12(3): 1958-1966, 2020 Jan 23.

Article en En | MEDLINE | ID: mdl-31909408

Search on Google

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2020 Tipo del documento: Article

Search on Google

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2020 Tipo del documento: Article