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Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11-22) green LEDs grown on silicon.
Zhao, X; Huang, K; Bruckbauer, J; Shen, S; Zhu, C; Fletcher, P; Feng, P; Cai, Y; Bai, J; Trager-Cowan, C; Martin, R W; Wang, T.
  • Zhao X; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD, UK.
  • Huang K; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD, UK.
  • Bruckbauer J; Department of Physics, SUPA,, University of Strathclyde, Glasgow, G4 0NG, UK.
  • Shen S; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD, UK.
  • Zhu C; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD, UK.
  • Fletcher P; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD, UK.
  • Feng P; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD, UK.
  • Cai Y; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD, UK.
  • Bai J; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD, UK.
  • Trager-Cowan C; Department of Physics, SUPA,, University of Strathclyde, Glasgow, G4 0NG, UK.
  • Martin RW; Department of Physics, SUPA,, University of Strathclyde, Glasgow, G4 0NG, UK.
  • Wang T; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD, UK. t.wang@sheffield.ac.uk.
Sci Rep ; 10(1): 12650, 2020 Jul 28.
Article en En | MEDLINE | ID: mdl-32724185