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Chemical vapor deposition of layered two-dimensional MoSi2N4 materials.
Hong, Yi-Lun; Liu, Zhibo; Wang, Lei; Zhou, Tianya; Ma, Wei; Xu, Chuan; Feng, Shun; Chen, Long; Chen, Mao-Lin; Sun, Dong-Ming; Chen, Xing-Qiu; Cheng, Hui-Ming; Ren, Wencai.
  • Hong YL; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China.
  • Liu Z; School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P. R. China.
  • Wang L; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China.
  • Zhou T; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China.
  • Ma W; School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P. R. China.
  • Xu C; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China.
  • Feng S; School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P. R. China.
  • Chen L; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China.
  • Chen ML; School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P. R. China.
  • Sun DM; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China.
  • Chen XQ; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China.
  • Cheng HM; School of Physical Science and Technology, ShanghaiTech University, Shanghai 200031, P. R. China.
  • Ren W; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China.
Science ; 369(6504): 670-674, 2020 08 07.
Article en En | MEDLINE | ID: mdl-32764066
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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2020 Tipo del documento: Article
Texto completo
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XML
PubMed Links
Search on Google

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2020 Tipo del documento: Article