Substrate-Induced Variances in Morphological and Structural Properties of MoS<sub>2</sub> Grown by Chemical Vapor Deposition on Epitaxial Graphene and SiO<sub>2</sub>.

Substrate-Induced Variances in Morphological and Structural Properties of MoS₂ Grown by Chemical Vapor Deposition on Epitaxial Graphene and SiO₂.

Sitek, Jakub; Plocharski, Janusz; Pasternak, Iwona; Gertych, Arkadiusz P; McAleese, Clifford; Conran, Ben R; Zdrojek, Mariusz; Strupinski, Wlodek.

Sitek J; Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland.
Plocharski J; Faculty of Chemistry, Warsaw University of Technology, Noakowskiego 3, 00-664 Warsaw, Poland.
Pasternak I; Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland.
Gertych AP; Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland.
McAleese C; AIXTRON Ltd., Buckingway Business Park, Anderson Road, Swavesey CB24 4FQ, United Kingdom.
Conran BR; AIXTRON Ltd., Buckingway Business Park, Anderson Road, Swavesey CB24 4FQ, United Kingdom.
Zdrojek M; Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland.
Strupinski W; Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland.

ACS Appl Mater Interfaces ; 12(40): 45101-45110, 2020 Oct 07.

Article en En | MEDLINE | ID: mdl-32930568