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Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition.
Hsu, Chia-Hsun; Geng, Xin-Peng; Wu, Wan-Yu; Zhao, Ming-Jie; Zhang, Xiao-Ying; Huang, Pao-Hsun; Lien, Shui-Yang.
  • Hsu CH; School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
  • Geng XP; School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
  • Wu WY; Department of Materials Science and Engineering, Da-Yeh University, ChungHua 51591, Taiwan.
  • Zhao MJ; School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
  • Zhang XY; School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
  • Huang PH; School of Information Engineering, Jimei University, Xiamen 361021, China.
  • Lien SY; School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
Molecules ; 25(21)2020 Oct 30.
Article en En | MEDLINE | ID: mdl-33143026
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Texto completo: 1 Banco de datos: MEDLINE Asunto principal: Oxígeno / Óxido de Zinc / Aluminio / Membranas Artificiales Idioma: En Año: 2020 Tipo del documento: Article
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Texto completo: 1 Banco de datos: MEDLINE Asunto principal: Oxígeno / Óxido de Zinc / Aluminio / Membranas Artificiales Idioma: En Año: 2020 Tipo del documento: Article