First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates.
Nano Lett
; 21(11): 4730-4737, 2021 Jun 09.
Article
en En
| MEDLINE
| ID: mdl-34038143
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MEDLINE
Tipo de estudio:
Clinical_trials
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En
Año:
2021
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Article