Hysteresis in As-Synthesized MoS<sub>2</sub> Transistors: Origin and Sensing Perspectives.

Marquez, Carlos; Salazar, Norberto; Gity, Farzan; Galdon, Jose C; Navarro, Carlos; Sampedro, Carlos; Hurley, Paul K; Chang, Edward Yi; Gamiz, Francisco

Hysteresis in As-Synthesized MoS₂ Transistors: Origin and Sensing Perspectives.

Marquez, Carlos; Salazar, Norberto; Gity, Farzan; Galdon, Jose C; Navarro, Carlos; Sampedro, Carlos; Hurley, Paul K; Chang, Edward Yi; Gamiz, Francisco.

Marquez C; Nanoelectronics Research Group (CITIC-UGR), Department of Electronics, University of Granada, 18071 Granada, Spain.
Salazar N; Nanoelectronics Research Group (CITIC-UGR), Department of Electronics, University of Granada, 18071 Granada, Spain.
Gity F; Nanoelectronic Materials and Devices Group, Tyndall National Institute, University College Cork, T12 R5CP Cork, Ireland.
Galdon JC; Nanoelectronics Research Group (CITIC-UGR), Department of Electronics, University of Granada, 18071 Granada, Spain.
Navarro C; Nanoelectronics Research Group (CITIC-UGR), Department of Electronics, University of Granada, 18071 Granada, Spain.
Sampedro C; Nanoelectronics Research Group (CITIC-UGR), Department of Electronics, University of Granada, 18071 Granada, Spain.
Hurley PK; Nanoelectronic Materials and Devices Group, Tyndall National Institute, University College Cork, T12 R5CP Cork, Ireland.
Chang EY; International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Gamiz F; Nanoelectronics Research Group (CITIC-UGR), Department of Electronics, University of Granada, 18071 Granada, Spain.