Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer.

Sala, Elisa M; Godsland, Max; Na, Young In; Trapalis, Aristotelis; Heffernan, Jon.

Sala EM; EPSRC National Epitaxy Facility, The University of Sheffield, North Campus, Broad Lane, S3 7HQ Sheffield, United Kingdom.
Godsland M; Department of Electronic and Electrical Engineering, The University of Sheffield, North Campus, Broad Lane, S37HQ Sheffield, United Kingdom.
Na YI; Department of Electronic and Electrical Engineering, The University of Sheffield, North Campus, Broad Lane, S37HQ Sheffield, United Kingdom.
Trapalis A; Department of Electronic and Electrical Engineering, The University of Sheffield, North Campus, Broad Lane, S37HQ Sheffield, United Kingdom.
Heffernan J; EPSRC National Epitaxy Facility, The University of Sheffield, North Campus, Broad Lane, S3 7HQ Sheffield, United Kingdom.

Nanotechnology ; 33(6)2021 Nov 19.

Article en En | MEDLINE | ID: mdl-34731846