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Strain-engineering on GeSe: Raman spectroscopy study.
Wang, Jin-Jin; Zhao, Yi-Feng; Zheng, Jun-Ding; Wang, Xiao-Ting; Deng, Xing; Guan, Zhao; Ma, Ru-Ru; Zhong, Ni; Yue, Fang-Yu; Wei, Zhong-Ming; Xiang, Ping-Hua; Duan, Chun-Gang.
  • Wang JJ; Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China. nzhong@ee.ecnu.edu.cn.
  • Zhao YF; Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China. nzhong@ee.ecnu.edu.cn.
  • Zheng JD; Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China. nzhong@ee.ecnu.edu.cn.
  • Wang XT; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Deng X; Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China. nzhong@ee.ecnu.edu.cn.
  • Guan Z; Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China. nzhong@ee.ecnu.edu.cn.
  • Ma RR; Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China. nzhong@ee.ecnu.edu.cn.
  • Zhong N; Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China. nzhong@ee.ecnu.edu.cn.
  • Yue FY; State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, China.
  • Wei ZM; Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China.
  • Xiang PH; Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China. nzhong@ee.ecnu.edu.cn.
  • Duan CG; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Phys Chem Chem Phys ; 23(47): 26997-27004, 2021 Dec 08.
Article en En | MEDLINE | ID: mdl-34842874
Among the IV-VI compounds, GeSe has wide applications in nanoelectronics due to its unique photoelectric properties and adjustable band gap. Even though modulation of its physical characteristics, including the band gap, by an external field will be useful for designing novel devices, experimental work is still rare. Here, we report a detailed anisotropic Raman response of GeSe flakes under uniaxial tension strain. Based on theoretical analysis, the anisotropy of the phonon response is attributed to a change in anisotropic bond length and bond angle under in-plane uniaxial strain. An enhancement in anisotropy and band gap is found due to strain along the ZZ or AC directions. This study shows that strain-engineering is an effective method for controlling the GeSe lattice, and paves the way for modulating the anisotropic electric and optical properties of GeSe.
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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2021 Tipo del documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2021 Tipo del documento: Article