Investigation of SiO2 Etch Characteristics by C6F6/Ar/O2 Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma.

Sung, Dain; Wen, Long; Tak, Hyunwoo; Lee, Hyejoo; Kim, Dongwoo; Yeom, Geunyoung

Investigation of SiO₂ Etch Characteristics by C₆F₆/Ar/O₂ Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma.

Sung, Dain; Wen, Long; Tak, Hyunwoo; Lee, Hyejoo; Kim, Dongwoo; Yeom, Geunyoung.

Sung D; Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea.
Wen L; Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea.
Tak H; Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea.
Lee H; Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea.
Kim D; Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea.
Yeom G; Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea.

Materials (Basel) ; 15(4)2022 Feb 10.

Article en En | MEDLINE | ID: mdl-35207841

Palabras clave

C6F6; L-FC; capacitively coupled plasma (CCP); high aspect ratio contact (HARC); inductively coupled plasma (ICP); liquid fluorocarbon (PFC); plasma etching

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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2022 Tipo del documento: Article

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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2022 Tipo del documento: Article