Nonvolatile High-Speed Switching Zn-O-N Thin-Film Transistors with a Bilayer Structure.

Kim, Hyoung-Do; Naqi, Muhammad; Jang, Seong Cheol; Park, Ji-Min; Park, Yun Chang; Park, Kyung; Nahm, Ho-Hyun; Kim, Sunkook; Kim, Hyun-Suk.

Kim HD; Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of Korea.
Naqi M; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Jang SC; Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of Korea.
Park JM; Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of Korea.
Park YC; National Nano Fab Center, Daejeon 34141, Republic of Korea.
Park K; Semiconductor Process Laboratory, WONIK IPS, Gyeonggi-do 17709, Republic of Korea.
Nahm HH; Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea.
Kim S; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Kim HS; Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of Korea.