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Bridging the gap between atomically thin semiconductors and metal leads.
Cai, Xiangbin; Wu, Zefei; Han, Xu; Chen, Yong; Xu, Shuigang; Lin, Jiangxiazi; Han, Tianyi; He, Pingge; Feng, Xuemeng; An, Liheng; Shi, Run; Wang, Jingwei; Ying, Zhehan; Cai, Yuan; Hua, Mengyuan; Liu, Junwei; Pan, Ding; Cheng, Chun; Wang, Ning.
  • Cai X; Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.
  • Wu Z; Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.
  • Han X; Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.
  • Chen Y; Department of Chemistry, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.
  • Xu S; Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.
  • Lin J; Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Han T; Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.
  • He P; Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.
  • Feng X; Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.
  • An L; Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.
  • Shi R; Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.
  • Wang J; Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.
  • Ying Z; Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.
  • Cai Y; Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Hua M; Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.
  • Liu J; Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Pan D; Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.
  • Cheng C; Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.
  • Wang N; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
Nat Commun ; 13(1): 1777, 2022 Apr 01.
Article en En | MEDLINE | ID: mdl-35365627
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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2022 Tipo del documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2022 Tipo del documento: Article