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Synthesis of Hydride-Doped Perovskite Stannate with Visible Light Absorption Capability.
Nakamura, Masashi; Akamatsu, Hirofumi; Fujii, Kotaro; Nambu, Yusuke; Ikeda, Yoichi; Kanazawa, Tomoki; Nozawa, Shunsuke; Yashima, Masatomo; Hayashi, Katsuro; Maeda, Kazuhiko.
  • Nakamura M; Department of Chemistry, School of Science, Tokyo Institute of Technology, 2-12-1-NE-2 Ookayama, Meguro-ku, Tokyo 152-8551, Japan.
  • Akamatsu H; Konoshima Chemical Co., Ltd., 80 Koda, Takuma, Mitoyo, Kagawa 769-1103, Japan.
  • Fujii K; Department of Applied Chemistry, Graduate School of Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan.
  • Nambu Y; Department of Chemistry, School of Science, Tokyo Institute of Technology, 2-12-1-NE-2 Ookayama, Meguro-ku, Tokyo 152-8551, Japan.
  • Ikeda Y; Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
  • Kanazawa T; FOREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan.
  • Nozawa S; Organization for Advanced Studies, Tohoku University, Sendai 980-8577, Japan.
  • Yashima M; Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
  • Hayashi K; Institute of Materials Structure Science, High Energy Accelerator Research Organization, Tsukuba, Ibaraki 305-0801, Japan.
  • Maeda K; Institute of Materials Structure Science, High Energy Accelerator Research Organization, Tsukuba, Ibaraki 305-0801, Japan.
Inorg Chem ; 61(17): 6584-6593, 2022 May 02.
Article en En | MEDLINE | ID: mdl-35430816
ABSTRACT
Narrow-gap semiconductors with visible light absorption capability have attracted attention as photofunctional materials. H--doped BaSn0.7Y0.3O3-δ containing Sn(II) species was recently reported to absorb visible light up to 600 nm, which represents the first demonstration of oxyhydride-based visible-light-absorbers. In the present study, a more detailed investigation was made to obtain information on the synthesis and properties of H--doped perovskite-type stannate with respect to the A-site cation of the material and the preparation conditions. H--doped ASn0.7Y0.3O3-δ (A = Ba, Ba0.5Sr0.5, and Sr) obtained by the reaction of ASn0.7Y0.3O3-δ precursors with CaH2 at 773 K under vacuum conditions was shown to have almost the same bandgap (ca. 2.1 eV), regardless of the A-site cation. Physicochemical measurements and theoretical calculations revealed that the identical bandgaps of H--doped ASn0.7Y0.3O3-δ are due to the simultaneous shift of the midgap states composed of Sn2+ with the conduction band minimum. Experimental results also indicated that the appropriate preparation conditions with respect to Y3+-substitution and the temperature for the synthesis of the ASn0.7Y0.3O3-δ precursors were essential to obtain H--doped products that have a low density of defects.

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2022 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2022 Tipo del documento: Article