Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO2/Al2O3-Based Charge Trapping Layers.

Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO₂/Al₂O₃-Based Charge Trapping Layers.

Spassov, Dencho; Paskaleva, Albena; Guziewicz, Elzbieta; Wozniak, Wojciech; Stanchev, Todor; Ivanov, Tsvetan; Wojewoda-Budka, Joanna; Janusz-Skuza, Marta.

Spassov D; Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, 1784 Sofia, Bulgaria.
Paskaleva A; Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, 1784 Sofia, Bulgaria.
Guziewicz E; Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland.
Wozniak W; Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland.
Stanchev T; Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, 1784 Sofia, Bulgaria.
Ivanov T; Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, 1784 Sofia, Bulgaria.
Wojewoda-Budka J; Institute of Metallurgy and Materials Science, Polish Academy of Sciences, ul. Reymonta 25, 30-059 Cracov, Poland.
Janusz-Skuza M; Institute of Metallurgy and Materials Science, Polish Academy of Sciences, ul. Reymonta 25, 30-059 Cracov, Poland.

Materials (Basel) ; 15(18)2022 Sep 09.

Article en En | MEDLINE | ID: mdl-36143596