Electrical Gating of the Charge-Density-Wave Phases in Two-Dimensional <i>h</i>-BN/1T-TaS<sub>2</sub> Devices.

Electrical Gating of the Charge-Density-Wave Phases in Two-Dimensional h-BN/1T-TaS₂ Devices.

Taheri, Maedeh; Brown, Jonas; Rehman, Adil; Sesing, Nicholas; Kargar, Fariborz; Salguero, Tina T; Rumyantsev, Sergey; Balandin, Alexander A.

Taheri M; Nano-Device Laboratory, Department of Electrical and Computer Engineering, Bourns College of Engineering, University of California, Riverside, California 92521, United States.
Brown J; Nano-Device Laboratory, Department of Electrical and Computer Engineering, Bourns College of Engineering, University of California, Riverside, California 92521, United States.
Rehman A; CENTERA Laboratories, Institute of High-Pressure Physics, Polish Academy of Sciences, Warsaw 01-142, Poland.
Sesing N; Department of Chemistry, University of Georgia, Athens, Georgia 30602, United States.
Kargar F; Nano-Device Laboratory, Department of Electrical and Computer Engineering, Bourns College of Engineering, University of California, Riverside, California 92521, United States.
Salguero TT; Phonon Optimized Engineered Materials Center, Materials Science and Engineering Program, Bourns College of Engineering, University of California, Riverside, California 92521, United States.
Rumyantsev S; Department of Chemistry, University of Georgia, Athens, Georgia 30602, United States.
Balandin AA; CENTERA Laboratories, Institute of High-Pressure Physics, Polish Academy of Sciences, Warsaw 01-142, Poland.

ACS Nano ; 16(11): 18968-18977, 2022 Nov 22.

Article en En | MEDLINE | ID: mdl-36315105