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Synthesis and Characterization of Polyimides with Naphthalene Ring Structure Introduced in the Main Chain.
Luo, Jiang-Rong; Liu, Yi-Dong; Liu, Heng; Chen, Wei-Peng; Cui, Ting-Ting; Xiao, Liangang; Min, Yonggang.
  • Luo JR; School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China.
  • Liu YD; School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China.
  • Liu H; School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China.
  • Chen WP; School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China.
  • Cui TT; School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China.
  • Xiao L; School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China.
  • Min Y; School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China.
Materials (Basel) ; 15(22)2022 Nov 14.
Article en En | MEDLINE | ID: mdl-36431500
ABSTRACT
In this paper, a new aromatic diamine monomer 4,4'-(2,6-naphthalenediyl)bis[benzenamine]) (NADA) was synthesized and a series of modified PI films containing naphthalene ring structure obtained by controlling the molar ratio of NADA monomer, ternary polymerization with 4,4'-oxydianiline (ODA), and pyromellitic dianhydride (PMDA). The effects of the introduction of the naphthalene ring on the free volume and various properties of PI were investigated by molecular dynamic simulations. The results show that the comprehensive properties of the modified films are all improved to some extent, with 5% thermal weight loss temperature (Td5%) of 569 °C, glass transition temperature (Tg) of 381 °C, tensile strength of 96.41 MPa, and modulus of elasticity of 2.45 GPa. Dielectric property test results show that the dielectric constant (Dk) of the film at 1 MHz is reduced from 3.21 to 2.82 and dielectric loss (Df) reduced from 0.0091 to 0.0065. It is noteworthy that the PI-1 dielectric constant is reduced from 3.26 to 3.01 at 10 GHz with only 5% NADA doping, which is expected to yield the best ratio and provide the possibility of industrial production.
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