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Engineering Silk Protein to Modulate Polymorphic Transitions for Green Lithography Resists.
Chung, Soon-Chun; Park, Joon-Song; Jha, Rakesh Kumar; Kim, Jieun; Kim, Jinha; Kim, Muyoung; Choi, Juwan; Kim, Hongdeok; Park, Da-Hye; Gogurla, Narendar; Lee, Tae-Yun; Jeon, Heonsu; Park, Ji-Yong; Choi, Joonmyung; Kim, Ginam; Kim, Sunghwan.
  • Chung SC; Material Research Center, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Suwon 16678, Korea.
  • Park JS; Material Research Center, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Suwon 16678, Korea.
  • Jha RK; Department of Electronic Engineering, Hanyang University, Seoul 04763, Korea.
  • Kim J; Material Research Center, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Suwon 16678, Korea.
  • Kim J; Material Research Center, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Suwon 16678, Korea.
  • Kim M; Department of Plasma Engineering, Korea Institute of Machinery and Materials, Daejeon 34103, Korea.
  • Choi J; Department of Electronic Engineering, Hanyang University, Seoul 04763, Korea.
  • Kim H; Department of Mechanical Engineering, BK21 FOUR ERICA-ACE Center, Hanyang University, Ansan 15588, Korea.
  • Park DH; Material Research Center, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Suwon 16678, Korea.
  • Gogurla N; Department of Energy Systems Research, Ajou University, Suwon 16499, Korea.
  • Lee TY; Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea.
  • Jeon H; Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea.
  • Park JY; Department of Energy Systems Research, Ajou University, Suwon 16499, Korea.
  • Choi J; Department of Mechanical Engineering, BK21 FOUR ERICA-ACE Center, Hanyang University, Ansan 15588, Korea.
  • Kim G; Material Research Center, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Suwon 16678, Korea.
  • Kim S; Department of Electronic Engineering, Hanyang University, Seoul 04763, Korea.
ACS Appl Mater Interfaces ; 14(51): 56623-56634, 2022 Dec 28.
Article en En | MEDLINE | ID: mdl-36524808
ABSTRACT
Silk protein is being increasingly introduced as a prospective material for biomedical devices. However, a limited locus to intervene in nature-oriented silk protein makes it challenging to implement on-demand functions to silk. Here, we report how polymorphic transitions are related with molecular structures of artificially synthesized silk protein and design principles to construct a green-lithographic and high-performative protein resist. The repetition number and ratio of two major building blocks in synthesized silk protein are essential to determine the size and content of ß-sheet crystallites, and radicals resulting from tyrosine cleavages by the 193 nm laser irradiation induce the ß-sheet to α-helix transition. Synthesized silk is designed to exclusively comprise homogeneous building blocks and exhibit high crystallization and tyrosine-richness, thus constituting an excellent basis for developing a high-performance deep-UV photoresist. Additionally, our findings can be conjugated to design an electron-beam resist governed by the different irradiation-protein interaction mechanisms. All synthesis and lithography processes are fully water-based, promising green lithography. Using the engineered silk, a nanopatterned planar color filter showing the reduced angle dependence can be obtained. Our study provides insights into the industrial scale production of silk protein with on-demand functions.
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Texto completo: 1 Banco de datos: MEDLINE Asunto principal: Seda Idioma: En Año: 2022 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Asunto principal: Seda Idioma: En Año: 2022 Tipo del documento: Article