First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices.

Chen, Kai-Huang; Cheng, Chien-Min; Wang, Na-Fu; Hung, Hsiao-Wen; Li, Cheng-Ying; Wu, Sean.

Chen KH; Department of Electronic Engineering, Center for Environmental Toxin and Emerging-Contaminant Research, Super Micro Mass Research & Technology Center, Cheng Shiu University, Chengcing Rd., Niaosong District, Kaohsiung City 83347, Taiwan.
Cheng CM; Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan.
Wang NF; Department of Electronic Engineering, Center for Environmental Toxin and Emerging-Contaminant Research, Super Micro Mass Research & Technology Center, Cheng Shiu University, Chengcing Rd., Niaosong District, Kaohsiung City 83347, Taiwan.
Hung HW; Green Energy and Environment Research Laboratories, Lighting Energy-Saving Department, Intelligent Energy-Saving Systems Division, Industrial Technology Research Institute, Hsinchu 31040, Taiwan.
Li CY; Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan.
Wu S; Department of Chemical and Materials Engineering, Lunghwa University of Science and Technology, Taoyuan 33306, Taiwan.

Nanomaterials (Basel) ; 13(1)2023 Jan 01.

Article en En | MEDLINE | ID: mdl-36616108