Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfO<sub><i>x</i></sub> tunnel junction memory.

Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfO_x tunnel junction memory.

Kim, Jihyung; Kwon, Osung; Lim, Eunjin; Kim, Dahye; Kim, Sungjun.

Kim J; Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, South Korea. sungjun@dongguk.edu.
Kwon O; Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, South Korea. sungjun@dongguk.edu.
Lim E; Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, South Korea. sungjun@dongguk.edu.
Kim D; Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, South Korea. sungjun@dongguk.edu.
Kim S; Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, South Korea. sungjun@dongguk.edu.

Phys Chem Chem Phys ; 25(6): 4588-4597, 2023 Feb 08.

Article en En | MEDLINE | ID: mdl-36723041

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2023 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2023 Tipo del documento: Article