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Dislocation-tuned ferroelectricity and ferromagnetism of the BiFeO3/SrRuO3 interface.
Li, Xiaomei; Han, Bo; Zhu, Ruixue; Shi, Ruochen; Wu, Mei; Sun, Yuanwei; Li, Yuehui; Liu, Bingyao; Wang, Lifen; Zhang, Jingmin; Tan, Congbing; Gao, Peng; Bai, Xuedong.
  • Li X; International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.
  • Han B; School of Integrated Circuits, East China Normal University, Shanghai 200241, China.
  • Zhu R; Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China.
  • Shi R; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
  • Wu M; International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.
  • Sun Y; Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China.
  • Li Y; International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.
  • Liu B; Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China.
  • Wang L; International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.
  • Zhang J; Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China.
  • Tan C; International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.
  • Gao P; Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China.
  • Bai X; International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.
Proc Natl Acad Sci U S A ; 120(13): e2213650120, 2023 Mar 28.
Article en En | MEDLINE | ID: mdl-36940334
ABSTRACT
Misfit dislocations at a heteroepitaxial interface produce huge strain and, thus, have a significant impact on the properties of the interface. Here, we use scanning transmission electron microscopy to demonstrate a quantitative unit-cell-by-unit-cell mapping of the lattice parameters and octahedral rotations around misfit dislocations at the BiFeO3/SrRuO3 interface. We find that huge strain field is achieved near dislocations, i.e., above 5% within the first three unit cells of the core, which is typically larger than that achieved from the regular epitaxy thin-film approach, thus significantly altering the magnitude and direction of the local ferroelectric dipole in BiFeO3 and magnetic moments in SrRuO3 near the interface. The strain field and, thus, the structural distortion can be further tuned by the dislocation type. Our atomic-scale study helps us to understand the effects of dislocations in this ferroelectricity/ferromagnetism heterostructure. Such defect engineering allows us to tune the local ferroelectric and ferromagnetic order parameters and the interface electromagnetic coupling, providing new opportunities to design nanosized electronic and spintronic devices.
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