Effect of Gate Bias Stress on the Electrical Characteristics of Ferroelectric Oxide Thin-Film Transistors with Poly(Vinylidenefluoride-Trifluoroethylene).

Gu, Bon-Seong; Park, Eun-Seo; Kwon, Jin-Hyuk; Kim, Min-Hoi

Gu, Bon-Seong; Park, Eun-Seo; Kwon, Jin-Hyuk; Kim, Min-Hoi.

Gu BS; Department of Creative Convergence Engineering, Hanbat National University, Daejeon 34158, Republic of Korea.
Park ES; Department of Creative Convergence Engineering, Hanbat National University, Daejeon 34158, Republic of Korea.
Kwon JH; Research Institute of Printed Electronics & 3D Printing, Industry University Cooperation Foundation, Hanbat National University, Daejeon 34158, Republic of Korea.
Kim MH; Department of Creative Convergence Engineering, Hanbat National University, Daejeon 34158, Republic of Korea.

Materials (Basel) ; 16(6)2023 Mar 12.

Article en En | MEDLINE | ID: mdl-36984165