Strain-induced ordered Ge(Si) hut wires on patterned Si (001) substrates.

Ming, Ming; Gao, Fei; Wang, Jian-Huan; Zhang, Jie-Yin; Wang, Ting; Yao, Yuan; Hu, Hao; Zhang, Jian-Jun.

Ming M; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. jjzhang@iphy.ac.cn.
Gao F; College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China.
Wang JH; Hefei National Laboratory, Hefei 230088, China.
Zhang JY; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. jjzhang@iphy.ac.cn.
Wang T; Qilu Institute of Technology, Jinan 250200, China.
Yao Y; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. jjzhang@iphy.ac.cn.
Hu H; Hefei National Laboratory, Hefei 230088, China.
Zhang JJ; Beijing Academy of Quantum Information Sciences, Beijing, 100193, China.

Nanoscale ; 15(16): 7311-7317, 2023 Apr 27.

Article en En | MEDLINE | ID: mdl-37013680

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2023 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2023 Tipo del documento: Article