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High-performing polysulfate dielectrics for electrostatic energy storage under harsh conditions.
Li, He; Chang, Boyce S; Kim, Hyunseok; Xie, Zongliang; Lainé, Antione; Ma, Le; Xu, Tianlei; Yang, Chongqing; Kwon, Junpyo; Shelton, Steve W; Klivansky, Liana M; Altoé, Virginia; Gao, Bing; Schwartzberg, Adam M; Peng, Zongren; Ritchie, Robert O; Xu, Ting; Salmeron, Miquel; Ruiz, Ricardo; Sharpless, K Barry; Wu, Peng; Liu, Yi.
  • Li H; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
  • Chang BS; The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
  • Kim H; These authors contributed equally.
  • Xie Z; The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
  • Lainé A; These authors contributed equally.
  • Ma L; Present address: Department of Materials Science and Engineering, Iowa State University, Ames, IA 50010, USA.
  • Xu T; Department of Chemistry and The Skaggs Institute for Chemical Biology, The Scripps Research Institute, La Jolla, CA 92037, USA.
  • Yang C; State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
  • Kwon J; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
  • Shelton SW; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
  • Klivansky LM; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720, USA.
  • Altoé V; State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
  • Gao B; The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
  • Schwartzberg AM; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
  • Peng Z; Department of Mechanical Engineering, University of California, Berkeley, Berkeley, CA 94720, USA.
  • Ritchie RO; The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
  • Xu T; The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
  • Salmeron M; The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
  • Ruiz R; Department of Chemistry and The Skaggs Institute for Chemical Biology, The Scripps Research Institute, La Jolla, CA 92037, USA.
  • Sharpless KB; The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
  • Wu P; State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
  • Liu Y; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
Joule ; 7(1): 95-111, 2023 Jan 18.
Article en En | MEDLINE | ID: mdl-37034575
ABSTRACT
High capacity polymer dielectrics that operate with high efficiencies under harsh electrification conditions are essential components for advanced electronics and power systems. It is, however, fundamentally challenging to design polymer dielectrics that can reliably withstand demanding temperatures and electric fields, which necessitate the balance of key electronic, electrical and thermal parameters. Herein, we demonstrate that polysulfates, synthesized by sulfur(VI) fluoride exchange (SuFEx) catalysis, another near-perfect click chemistry reaction, serve as high-performing dielectric polymers that overcome such bottlenecks. Free-standing polysulfate thin films from convenient solution processes exhibit superior insulating properties and dielectric stability at elevated temperatures, which are further enhanced when ultrathin (~5 nm) oxide coatings are deposited by atomic layer deposition. The corresponding electrostatic film capacitors display high breakdown strength (>700 MV m-1) and discharged energy density of 8.64 J cm-3 at 150 °C, outperforming state-of-the-art free-standing capacitor films based on commercial and synthetic dielectric polymers and nanocomposites.