Your browser doesn't support javascript.
loading
A GHz Silicon-Based Width Extensional Mode MEMS Resonator with Q over 10,000.
Liu, Wenli; Lu, Yujie; Chen, Zeji; Jia, Qianqian; Zhao, Junyuan; Niu, Bo; Wang, Wei; Hao, Yalu; Zhu, Yinfang; Yang, Jinling; Yang, Fuhua.
  • Liu W; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Lu Y; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Chen Z; State Key Laboratory of Transducer Technology, Shanghai 200050, China.
  • Jia Q; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Zhao J; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Niu B; State Key Laboratory of Transducer Technology, Shanghai 200050, China.
  • Wang W; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Hao Y; Kunming Institute of Physics, Kunming 650223, China.
  • Zhu Y; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Yang J; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Yang F; State Key Laboratory of Transducer Technology, Shanghai 200050, China.
Sensors (Basel) ; 23(8)2023 Apr 07.
Article en En | MEDLINE | ID: mdl-37112146