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Coexistence of Magnon-Induced and Rashba-Induced Unidirectional Magnetoresistance in Antiferromagnets.
Zheng, Zhenyi; Gu, Youdi; Zhang, Zhizhong; Zhang, Xiwen; Zhao, Tieyang; Li, Huihui; Ren, Lizhu; Jia, Lanxin; Xiao, Rui; Zhou, Heng-An; Zhang, Qihan; Shi, Shu; Zhang, Yue; Zhao, Chao; Shen, Lei; Zhao, Weisheng; Chen, Jingsheng.
  • Zheng Z; Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore.
  • Gu Y; Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore.
  • Zhang Z; MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
  • Zhang X; Department of Mechanical Engineering, National University of Singapore, Singapore 117575, Singapore.
  • Zhao T; Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore.
  • Li H; Beijing Superstring Academy of Memory Technology, Beijing 100176, China.
  • Ren L; Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117575, Singapore.
  • Jia L; Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore.
  • Xiao R; Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore.
  • Zhou HA; Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore.
  • Zhang Q; Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore.
  • Shi S; Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore.
  • Zhang Y; MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
  • Zhao C; Beijing Superstring Academy of Memory Technology, Beijing 100176, China.
  • Shen L; Department of Mechanical Engineering, National University of Singapore, Singapore 117575, Singapore.
  • Zhao W; MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
  • Chen J; Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore.
Nano Lett ; 23(14): 6378-6385, 2023 Jul 26.
Article en En | MEDLINE | ID: mdl-37418477
Unidirectional magnetoresistance (UMR) has been intensively studied in ferromagnetic systems, which is mainly induced by spin-dependent and spin-flip electron scattering. Yet, UMR in antiferromagnetic (AFM) systems has not been fully understood to date. In this work, we reported UMR in a YFeO3/Pt heterostructure where YFeO3 is a typical AFM insulator. Magnetic-field dependence and temperature dependence of transport measurements indicate that magnon dynamics and interfacial Rashba splitting are two individual origins for AFM UMR, which is consistent with the UMR theory in ferromagnetic systems. We further established a comprehensive theoretical model that incorporates micromagnetic simulation, density functional theory calculation, and the tight-binding model, which explain the observed AFM UMR phenomenon well. Our work sheds light on the intrinsic transport property of the AFM system and may facilitate the development of AFM spintronic devices.
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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2023 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2023 Tipo del documento: Article