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Anion-induced robust ferroelectricity in sulfurized pseudo-rhombohedral epitaxial BiFeO3 thin films via polarization rotation.
Xi, Guoqiang; Pan, Zhao; Fang, Yue-Wen; Tu, Jie; Li, Hangren; Yang, Qianqian; Liu, Chen; Luo, Huajie; Ding, Jiaqi; Xu, Shuai; Deng, Shiqing; Wang, Qingxiao; Zheng, Dongxing; Long, Youwen; Jin, Kuijuan; Zhang, Xixiang; Tian, Jianjun; Zhang, Linxing.
  • Xi G; Institute for Advanced Materials Technology, University of Science and Technology Beijing, Beijing 100083, China. linxingzhang@ustb.edu.cn.
  • Pan Z; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. zhaopan@iphy.ac.cn.
  • Fang YW; Centro de Física de Materiales (CSIC-UPV/EHU), Manuel de Lardizabal pasealekua 5, 20018 Donostia/San Sebastián, Spain. fyuewen@gmail.com.
  • Tu J; Fisika Aplikatua Saila, Gipuzkoako Ingeniaritza Eskola, University of the Basque Country (UPV/EHU), Europa Plaza 1, 20018 Donostia/San Sebastián, Spain.
  • Li H; Institute for Advanced Materials Technology, University of Science and Technology Beijing, Beijing 100083, China. linxingzhang@ustb.edu.cn.
  • Yang Q; Institute for Advanced Materials Technology, University of Science and Technology Beijing, Beijing 100083, China. linxingzhang@ustb.edu.cn.
  • Liu C; Institute for Advanced Materials Technology, University of Science and Technology Beijing, Beijing 100083, China. linxingzhang@ustb.edu.cn.
  • Luo H; Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
  • Ding J; Beijing Advanced Innovation Center for Materials Genome Engineering, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China.
  • Xu S; Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China.
  • Deng S; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. zhaopan@iphy.ac.cn.
  • Wang Q; Beijing Advanced Innovation Center for Materials Genome Engineering, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China.
  • Zheng D; Corelab, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
  • Long Y; Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
  • Jin K; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. zhaopan@iphy.ac.cn.
  • Zhang X; Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China.
  • Tian J; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. zhaopan@iphy.ac.cn.
  • Zhang L; Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
Mater Horiz ; 10(10): 4389-4397, 2023 Oct 02.
Article en En | MEDLINE | ID: mdl-37465904
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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2023 Tipo del documento: Article
Texto completo
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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2023 Tipo del documento: Article