Strain-induced degradation and recovery of flexible NbO<sub>x</sub>-based threshold switching device.

Strain-induced degradation and recovery of flexible NbO_x-based threshold switching device.

Ang, Jia Min; Dananjaya, Putu Andhita; Ang, Calvin Ching Ian; Lim, Gerard Joseph; Lew, Wen Siang.

Ang JM; School of Physical and Mathematical Sciences, Nanyang Technological Univcersity, 21 Nanyang Link, Singapore, 637371, Singapore.
Dananjaya PA; GLOBALFOUNDRIES Singapore Pte. Ltd., 60 Woodlands Industrial Park D St 2, Singapore, 738406, Singapore.
Ang CCI; School of Physical and Mathematical Sciences, Nanyang Technological Univcersity, 21 Nanyang Link, Singapore, 637371, Singapore.
Lim GJ; School of Physical and Mathematical Sciences, Nanyang Technological Univcersity, 21 Nanyang Link, Singapore, 637371, Singapore.
Lew WS; School of Physical and Mathematical Sciences, Nanyang Technological Univcersity, 21 Nanyang Link, Singapore, 637371, Singapore.

Sci Rep ; 13(1): 16000, 2023 Sep 25.

Article en En | MEDLINE | ID: mdl-37749156

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2023 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2023 Tipo del documento: Article