Dual-Level Enhanced Nonradiative Carrier Recombination in Wide-Gap Semiconductors: The Case of Oxygen Vacancy in SiO<sub>2</sub>.

Dual-Level Enhanced Nonradiative Carrier Recombination in Wide-Gap Semiconductors: The Case of Oxygen Vacancy in SiO₂.

Qiu, Chen; Song, Yu; Deng, Hui-Xiong; Wei, Su-Huai.

Qiu C; Beijing Computational Science Research Center, Beijing 100094, China.
Song Y; Beijing Computational Science Research Center, Beijing 100094, China.
Deng HX; College of Physics and Electronic Information Engineering, Neijiang Normal University, Neijiang 641112, China.
Wei SH; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China.

J Am Chem Soc ; 2023 Nov 02.

Article en En | MEDLINE | ID: mdl-37916909

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2023 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2023 Tipo del documento: Article