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Visualization of Confined Electrons at Grain Boundaries in a Monolayer Charge-Density-Wave Metal.
Chen, Yaoyao; Zhang, Yu; Wang, Wei; Song, Xuan; Jia, Liang-Guang; Zhang, Can; Zhou, Lili; Han, Xu; Yang, Hui-Xia; Liu, Li-Wei; Si, Chen; Gao, Hong-Jun; Wang, Ye-Liang.
  • Chen Y; School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, P. R. China.
  • Zhang Y; School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, P. R. China.
  • Wang W; Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Beijing, 100081, P. R. China.
  • Song X; School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China.
  • Jia LG; School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, P. R. China.
  • Zhang C; School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, P. R. China.
  • Zhou L; School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, P. R. China.
  • Han X; School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, P. R. China.
  • Yang HX; School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, P. R. China.
  • Liu LW; School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, P. R. China.
  • Si C; School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, P. R. China.
  • Gao HJ; School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China.
  • Wang YL; Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
Adv Sci (Weinh) ; : e2306171, 2023 Nov 20.
Article en En | MEDLINE | ID: mdl-37984874
ABSTRACT
1D grain boundaries in transition metal dichalcogenides (TMDs) are ideal for investigating the collective electron behavior in confined systems. However, clear identification of atomic structures at the grain boundaries, as well as precise characterization of the electronic ground states, have largely been elusive. Here, direct evidence for the confined electronic states and the charge density modulations at mirror twin boundaries (MTBs) of monolayer NbSe2 , a representative charge-density-wave (CDW) metal, is provided. The scanning tunneling microscopy (STM) measurements, accompanied by the first-principles calculations, reveal that there are two types of MTBs in monolayer NbSe2 , both of which exhibit band bending effect and 1D boundary states. Moreover, the intrinsic CDW signatures of monolayer NbSe2 are dramatically suppressed as approaching an isolated MTB but can be either enhanced or suppressed in the MTB-constituted confined wedges. Such a phenomenon can be well explained by the MTB-CDW interference interactions. The results reveal the underlying physics of the confined electrons at MTBs of CDW metals, paving the way for the grain boundary engineering of the functionality.
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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2023 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2023 Tipo del documento: Article