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Direct identification of interfacial degradation in blue OLEDs using nanoscale chemical depth profiling.
Trindade, Gustavo F; Sul, Soohwan; Kim, Joonghyuk; Havelund, Rasmus; Eyres, Anya; Park, Sungjun; Shin, Youngsik; Bae, Hye Jin; Sung, Young Mo; Matjacic, Lidija; Jung, Yongsik; Won, Jungyeon; Jeon, Woo Sung; Choi, Hyeonho; Lee, Hyo Sug; Lee, Jae-Cheol; Kim, Jung-Hwa; Gilmore, Ian S.
  • Trindade GF; National Physical Laboratory, NiCE-MSI, Teddington, TW11 0LW, UK.
  • Sul S; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Kim J; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Havelund R; National Physical Laboratory, NiCE-MSI, Teddington, TW11 0LW, UK.
  • Eyres A; National Physical Laboratory, NiCE-MSI, Teddington, TW11 0LW, UK.
  • Park S; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Shin Y; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Bae HJ; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Sung YM; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Matjacic L; National Physical Laboratory, NiCE-MSI, Teddington, TW11 0LW, UK.
  • Jung Y; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Won J; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Jeon WS; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Choi H; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Lee HS; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Lee JC; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Kim JH; Korea Research Institute of Material Property Analysis (KRIMPA), 712, Nongseo-dong 455, Yongin, 17111, Republic of Korea.
  • Gilmore IS; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea. jh1179.kim@samsung.com.
Nat Commun ; 14(1): 8066, 2023 Dec 06.
Article en En | MEDLINE | ID: mdl-38052834
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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2023 Tipo del documento: Article
Texto completo
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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2023 Tipo del documento: Article