Tuning Polarity in WSe2/AlScN FeFETs via Contact Engineering.
ACS Nano
; 18(5): 4180-4188, 2024 Feb 06.
Article
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| MEDLINE
| ID: mdl-38271989
ABSTRACT
Recent advancements in ferroelectric field-effect transistors (FeFETs) using two-dimensional (2D) semiconductor channels and ferroelectric Al0.68Sc0.32N (AlScN) allow high-performance nonvolatile devices with exceptional ON-state currents, large ON/OFF current ratios, and large memory windows (MW). However, previous studies have solely focused on n-type FeFETs, leaving a crucial gap in the development of p-type and ambipolar FeFETs, which are essential for expanding their applicability to a wide range of circuit-level applications. Here, we present a comprehensive demonstration of n-type, p-type, and ambipolar FeFETs on an array scale using AlScN and multilayer/monolayer WSe2. The dominant injected carrier type is modulated through contact engineering at the metal-semiconductor junction, resulting in the realization of all three types of FeFETs. The effect of contact engineering on the carrier injection is further investigated through technology-computer-aided design simulations. Moreover, our 2D WSe2/AlScN FeFETs achieve high electron and hole current densities of â¼20 and â¼10 µA/µm, respectively, with a high ON/OFF ratio surpassing â¼107 and a large MW of >6 V (0.14 V/nm).
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2024
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