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Interface Modulation for the Heterointegration of Diamond on Si.
Li, Xing; Wan, Li; Lin, Chaonan; Huang, Wen-Tao; Zhou, Jing; Zhu, Jie; Yang, Xun; Yang, Xigui; Zhang, Zhenfeng; Zhu, Yandi; Ren, Xiaoyan; Jin, Ziliang; Dong, Lin; Cheng, Shaobo; Li, Shunfang; Shan, Chongxin.
  • Li X; Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
  • Wan L; Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
  • Lin C; Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
  • Huang WT; Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
  • Zhou J; School of Energy and Power Engineering, Key Lab of Ocean Energy Utilization and Energy Conservation of Ministry of Education, Dalian University of Technology, Dalian, 116024, China.
  • Zhu J; School of Energy and Power Engineering, Key Lab of Ocean Energy Utilization and Energy Conservation of Ministry of Education, Dalian University of Technology, Dalian, 116024, China.
  • Yang X; Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
  • Yang X; Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
  • Zhang Z; Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
  • Zhu Y; Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
  • Ren X; Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
  • Jin Z; State Key Laboratory of Lunar and Planetary Sciences, Macau University of Science and Technology, Taipa, Macao, 999078, China.
  • Dong L; Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
  • Cheng S; Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
  • Li S; Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
  • Shan C; Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
Adv Sci (Weinh) ; 11(24): e2309126, 2024 Jun.
Article en En | MEDLINE | ID: mdl-38477425