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Gate-Tunable Quantum Acoustoelectric Transport in Graphene.
Mou, Yicheng; Chen, Haonan; Liu, Jiaqi; Lan, Qing; Wang, Jiayu; Zhang, Chuanxin; Wang, Yuxiang; Gu, Jiaming; Zhao, Tuoyu; Jiang, Xue; Shi, Wu; Zhang, Cheng.
  • Mou Y; State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China.
  • Chen H; State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China.
  • Liu J; State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China.
  • Lan Q; State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China.
  • Wang J; State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China.
  • Zhang C; Department of Biomedical Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China.
  • Wang Y; State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China.
  • Gu J; State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China.
  • Zhao T; State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China.
  • Jiang X; Department of Biomedical Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China.
  • Shi W; State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China.
  • Zhang C; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China.
Nano Lett ; 24(15): 4625-4632, 2024 Apr 17.
Article en En | MEDLINE | ID: mdl-38568748
ABSTRACT
Transport probes the motion of quasi-particles in response to external excitations. Apart from the well-known electric and thermoelectric transport, acoustoelectric transport induced by traveling acoustic waves has rarely been explored. Here, by adopting hybrid nanodevices integrated with piezoelectric substrates, we establish a simple design of acoustoelectric transport with gate tunability. We fabricate dual-gated acoustoelectric devices based on hBN-encapsulated graphene on LiNbO3. Longitudinal and transverse acoustoelectric voltages are generated by launching a pulsed surface acoustic wave. The gate dependence of zero-field longitudinal acoustoelectric signal presents strikingly similar profiles to that of Hall resistivity, providing a valid approach for extracting carrier density without magnetic field. In magnetic fields, acoustoelectric quantum oscillations appear due to Landau quantization, which are more robust and pronounced than Shubnikov-de Haas oscillations. Our work demonstrates a feasible acoustoelectric setup with gate tunability, which can be extended to the broad scope of various van der Waals materials.
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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2024 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2024 Tipo del documento: Article